#Microsemi Power Products Group, #APT40GR120B2D30, #IGBT_Module, #IGBT, APT40GR120B2D30 Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel; APT40GR120B2D30
Manufacturer Part Number: APT40GR120B2D30Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 1.67Collector Current-Max (IC): 88 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Thr Voltage-Max: 6 VGate-Emitter Voltage-Max: 30 VOperating Temperature-Max: 150 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 500 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NO Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel