#APT, #APT5011JNF, #IGBT_Module, #IGBT, APT5011JNF Power Field-Effect Transistor, 46A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconduc
Manufacturer Part Number: APT5011JNFPart Life Cycle Code: ObsoleteIhs Manufacturer: ADVANCED POWER TECHNOLOGY INCPackage Description: FLANGE MOUNT, R-PUFM-X4Manufacturer: Advanced Power TechnologyRisk Rank: 5.83Additional Feature: FREDFETCase Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 500 VDrain Current-Max (Abs) (ID): 46 ADrain Current-Max (ID): 46 ADrain-source On Resistance-Max: 0.11 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 630 pFJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 520 WPower Dissipation-Max (Abs): 520 WPulsed Drain Current-Max (IDM): 184 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICONTurn-off Time-Max (toff): 100 nsTurn-on Time-Max (ton): 86 ns Power Field-Effect Transistor, 46A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET