Microsemi Power Products Group APTDF200H60G IGBT Module

Manufacturer Part Number: APTDF200H60GPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: R-XUFM-X4Pin Count: 4HTS Code: 8541.10.00.80Manufacturer: Microsemi CorporationRisk Rank: 1.83Additional Feature: LOW NOISECase Connection: ISOLATEDConfiguration: BRIDGE, 4 ELEMENTSDiode Element Material: SILICONDiode Type: BRIDGE RECTIFIER DIODEForward Voltage-Max (VF): 2 VJESD-30 Code: R-XUFM-X4JESD-609 Code: e1Moisture Sensitivity Level: 1Non-rep Pk Forward Current-Max: 1500 ANumber of Elements: 4Number of Phases: 1Number of Terminals: 4Operating Temperature-Max: 175 °COperating Temperature-Min: -40 °COutput Current-Max: 270 APackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRep Pk Reverse Voltage-Max: 600 VSubcategory: Bridge Rectifier DiodesSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Bridge Rectifier Diode, 1 Phase, 270A, 600V V(RRM), Silicon, ROHS COMPLIANT, SP6, MODULE-4