Microsemi Power Products Group APTDF60H1201G IGBT Module

Manufacturer Part Number: APTDF60H1201GPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPackage Description: R-XUFM-T12Pin Count: 12HTS Code: 8541.10.00.80Manufacturer: Microsemi CorporationRisk Rank: 5.77Breakdown Voltage-Min: 1200 VCase Connection: ISOLATEDConfiguration: BRIDGE, 4 ELEMENTSDiode Element Material: SILICONDiode Type: BRIDGE RECTIFIER DIODEForward Voltage-Max (VF): 3 VJESD-30 Code: R-XUFM-T12JESD-609 Code: e1Moisture Sensitivity Level: 1Non-rep Pk Forward Current-Max: 500 ANumber of Elements: 4Number of Phases: 1Number of Terminals: 12Operating Temperature-Max: 175 °COperating Temperature-Min: -40 °COutput Current-Max: 82 APackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRep Pk Reverse Voltage-Max: 1200 VSubcategory: Bridge Rectifier DiodesSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: THROUGH-HOLETerminal Position: UPPERTime Bridge Rectifier Diode, 1 Phase, 82A, 1200V V(RRM), Silicon, ROHS COMPLIANT, SP1, 12 PIN