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APT APTGF150X60E3G IGBT Module

APTGF150X60E3G

#APT, #APTGF150X60E3G, #IGBT_Module, #IGBT, APTGF150X60E3G Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, MODULE-33; APTGF150X60E3G

· Categories: IGBT Module
· Manufacturer: APT
· Price: US$
· Date Code: 11+
. Available Qty: 23
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APTGF150X60E3G Specification

Sell APTGF150X60E3G, #APT #APTGF150X60E3G Stock, APTGF150X60E3G Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, MODULE-33; APTGF150X60E3G, #IGBT_Module, #IGBT, #APTGF150X60E3G
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/aptgf150x60e3g.html

Manufacturer Part Number: APTGF150X60E3GPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X33Pin Count: 33Manufacturer: Microsemi CorporationRisk Rank: 5.68Case Connection: ISOLATEDCollector Current-Max (IC): 225 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X33JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 6Number of Terminals: 33Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, MODULE-33

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