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APT APTGF50X120E2G IGBT Module

APTGF50X120E2G

#APT, #APTGF50X120E2G, #IGBT_Module, #IGBT, APTGF50X120E2G Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, MODULE-17; APTGF50X120E2G

· Categories: IGBT Module
· Manufacturer: APT
· Price: US$
· Date Code: 11+
. Available Qty: 85
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APTGF50X120E2G Specification

Sell APTGF50X120E2G, #APT #APTGF50X120E2G Stock, APTGF50X120E2G Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, MODULE-17; APTGF50X120E2G, #IGBT_Module, #IGBT, #APTGF50X120E2G
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/aptgf50x120e2g.html

Manufacturer Part Number: APTGF50X120E2GPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X17Pin Count: 17Manufacturer: Microsemi CorporationRisk Rank: 5.63Case Connection: ISOLATEDCollector Current-Max (IC): 72 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X17JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 6Number of Terminals: 17Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, MODULE-17

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