#Microsemi Power Products Group, #APTGF90TDU60PG, #IGBT_Module, #IGBT, APTGF90TDU60PG Insulated Gate Bipolar Transistor, 110A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6-P, MODULE-21;
Manufacturer Part Number: APTGF90TDU60PGRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: ROHS COMPLIANT, SP6-P, MODULE-21Pin Count: 21Manufacturer: Microsemi CorporationRisk Rank: 5.73Case Connection: ISOLATEDCollector Current-Max (IC): 110 ACollector-Emitter Voltage-Max: 600 VConfiguration: 3 BANKS, COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X21JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 6Number of Terminals: 21Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 416 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 110A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6-P, MODULE-21