#Microsemi Power Products Group, #APTGL180A120T3AG, #IGBT_Module, #IGBT, APTGL180A120T3AG Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN; A
Manufacturer Part Number: APTGL180A120T3AGRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPackage Description: FLANGE MOUNT, R-XUFM-X20Pin Count: 25ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.72Case Connection: ISOLATEDCollector Current-Max (IC): 230 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X20Number of Elements: 2Number of Terminals: 20Operating Temperature-Max: 175 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 940 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN