#Microsemi Power Products Group, #APTGLQ200H120G, #IGBT_Module, #IGBT, APTGLQ200H120G Insulated Gate Bipolar Transistor, 350A I(C), 1200V V(BR)CES; APTGLQ200H120G
Manufacturer Part Number: APTGLQ200H120GRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPManufacturer: Microsemi CorporationRisk Rank: 5.72Collector Current-Max (IC): 350 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Voltage-Max: 20 VNumber of Elements: 1Operating Temperature-Max: 175 °CPower Dissipation-Max (Abs): 1000 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 2.4 V Insulated Gate Bipolar Transistor, 350A I(C), 1200V V(BR)CES