#APT, #APTGT75X120E3G, #IGBT_Module, #IGBT, APTGT75X120E3G Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-33; APTGT75X120E3G
Manufacturer Part Number: APTGT75X120E3G
Pbfree Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: MICROSEMI CORP
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X33
Pin Count: 33
Manufacturer: Microsemi Corporation
Risk Rank: 5.03
Case Connection: ISOLATED
Collector Current-Max (IC): 100 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code: R-XUFM-X33
JESD-609 Code: e1
Moisture Sensitivity Level: 1
Number of Elements: 6
Number of Terminals: 33
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Qualification Status: Not Qualified
Surface Mount: NO
Terminal Finish: TIN SILVER COPPER
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-33