#Microsemi Power Products Group, #APTGV50H60BT3G, #IGBT_Module, #IGBT, APTGV50H60BT3G Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES; APTGV50H60BT3G
Manufacturer Part Number: APTGV50H60BT3GRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.84Collector Current-Max (IC): 65 ACollector-Emitter Voltage-Max: 600 VGate-Emitter Voltage-Max: 20 VNumber of Elements: 1Operating Temperature-Max: 100 °CPower Dissipation-Max (Abs): 250 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 2.45 V Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES