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Microsemi Power Products Group ARF463AP1G IGBT Module

ARF463AP1G

#Microsemi Power Products Group, #ARF463AP1G, #IGBT_Module, #IGBT, ARF463AP1G RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semico

· Categories: IGBT Module
· Manufacturer: Microsemi Power Products Group
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 728
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ARF463AP1G Specification

Sell ARF463AP1G, #Microsemi Power Products Group #ARF463AP1G Stock, ARF463AP1G RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN; ARF463AP1G, #IGBT_Module, #IGBT, #ARF463AP1G
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URL: https://www.slw-ele.com/arf463ap1g.html

Manufacturer Part Number: ARF463AP1GPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: TO-247ADPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 1.12Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 500 VDrain Current-Max (Abs) (ID): 9 ADrain Current-Max (ID): 9 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: VERY HIGH FREQUENCY BANDJEDEC-95 Code: TO-247ADJESD-30 Code: R-PSFM-T3JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 180 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: THROUGH-HOLETerminal Position: SINGLETime RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN

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