Avago Technologies US Inc. ATF-521P8-TR2 IGBT Module

Manufacturer Part Number: ATF-521P8-TR2Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Broadcom LTDPackage Description: SMALL OUTLINE, S-PDSO-N8ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: Broadcom LimitedRisk Rank: 5.09Additional Feature: LOW NOISECase Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 7 VDrain Current-Max (Abs) (ID): 0.5 ADrain Current-Max (ID): 0.5 AFET Technology: HIGH ELECTRON MOBILITYHighest Frequency Band: L BANDJEDEC-95 Code: MO-229JESD-30 Code: S-PDSO-N8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 1.5 WPower Gain-Min (Gp): 15.5 dBQualification Status: Not QualifiedSubcategory: FET RF Small SignalSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: NO LEADTerminal Position: DUALTime RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8