International Rectifier AUIRF7343QTR IGBT Module

Manufacturer Part Number: AUIRF7343QTRRohs Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: SMALL OUTLINE, R-PDSO-G8ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 7.25Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCEAvalanche Energy Rating (Eas): 72 mJConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 55 VDrain Current-Max (Abs) (ID): 4.7 ADrain Current-Max (ID): 4.7 ADrain-source On Resistance-Max: 0.05 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: MS-012AAJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNEL AND P-CHANNELPower Dissipation-Max (Abs): 2 WPulsed Drain Current-Max (IDM): 38 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8