#Rohm Semiconductor, #BCW30T116, #IGBT_Module, #IGBT, BCW30T116 Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon; BCW30T116
Manufacturer Part Number: BCW30T116Part Life Cycle Code: ObsoleteIhs Manufacturer: Rohm CO LTDPackage Description: SMALL OUTLINE, R-PDSO-G3ECCN Code: EAR99HTS Code: 8541.21.00.75Manufacturer: Rohm SemiconductorRisk Rank: 5.6Collector Current-Max (IC): 0.1 ACollector-Base Capacitance-Max: 7 pFCollector-Emitter Voltage-Max: 32 VConfiguration: SINGLEDC Current Gain-Min (hFE): 210JESD-30 Code: R-PDSO-G3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: PNPQualification Status: Not QualifiedSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTransistor Application: AMPLIFIERTransistor Element Material: SILICONTransition Frequency-Nom (fT): 250 MHzVCEsat-Max: 0.3 V Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon