#Bourns Inc., #BD250B_S, #IGBT_Module, #IGBT, BD250B-S Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, FM-3;
Manufacturer Part Number: BD250B-SRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: BOURNS INCPackage Description: PLASTIC, FM-3Pin Count: 3ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Bourns IncRisk Rank: 5.7Case Connection: COLLECTORCollector Current-Max (IC): 25 ACollector-Emitter Voltage-Max: 80 VConfiguration: SINGLEDC Current Gain-Min (hFE): 5JESD-30 Code: R-PSFM-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: PNPPower Dissipation-Max (Abs): 125 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, FM-3