#NXP Semiconductors, #BLP7G22_05Z, #IGBT_Module, #IGBT, BLP7G22-05Z RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MO-2
Manufacturer Part Number: BLP7G22-05ZRohs Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: AMPLEON NETHERLANDS B VPackage Description: SMALL OUTLINE, R-PDSO-N12ECCN Code: EAR99Manufacturer: AmpleonRisk Rank: 5.67Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 65 VFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: S BANDJEDEC-95 Code: MO-229JESD-30 Code: R-PDSO-N12Number of Elements: 1Number of Terminals: 12Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELReference Standard: IEC-60134Surface Mount: YESTerminal Form: NO LEADTerminal Position: DUALTime RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MO-229, 6 X 4 MM, 0.85 MM HEIGHT, ROHS COMPLIANT, THIN, PLASTIC, HVSON-12