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Fairchild Semiconductor BS170_D26Z IGBT Module

BS170_D26Z

#Fairchild Semiconductor, #BS170_D26Z, #IGBT_Module, #IGBT, BS170_D26Z Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconducto

· Categories: IGBT Module
· Manufacturer: Fairchild Semiconductor
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 2250
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BS170_D26Z Specification

Sell BS170_D26Z, #Fairchild Semiconductor #BS170_D26Z Stock, BS170_D26Z Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92; BS170_D26Z, #IGBT_Module, #IGBT, #BS170_D26Z
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URL: https://www.slw-ele.com/bs170_d26z.html

Manufacturer Part Number: BS170_D26ZRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: CYLINDRICAL, O-PBCY-T3ECCN Code: EAR99HTS Code: 8541.21.00.95Manufacturer: ON SemiconductorRisk Rank: 0.97Configuration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 60 VDrain Current-Max (Abs) (ID): 0.5 ADrain Current-Max (ID): 0.5 ADrain-source On Resistance-Max: 5 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 10 pFJEDEC-95 Code: TO-92JESD-30 Code: O-PBCY-T3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: ROUNDPackage Style: CYLINDRICALPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.83 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: BOTTOMTime Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

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