Infineon BSM100GD120DLC IGBT Module

BSM100GD120DLC

Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: No

Brand: Infineon Technologies

Product: IGBT Silicon Modules

Configuration: Hex

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 160 A

Gate-Emitter Leakage Current: 400 nA

Pd - Power Dissipation: 650 W

Package / Case: EconoPACK 3A

Maximum Operating Temperature: + 125 C

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Factory Pack Quantity: 10

100A/1200V/IGBT/6U; IGBT Modules 1200V 100A 3-PHASE