Infineon BSM100GD120DN2 IGBT Module

BSM100GD120DN2

Manufacturer: Infineon

Product Category: IGBT Modules

· Solderable Power module

· 3-phase full-bridge

· Including fast free-wheel diodes

· Package with insulated metal base plate Type BSM 100 GD 120 DN2

Maximum Ratings Parameter

Collector-emitter voltage Collector-gate voltage RGE = 20 k

Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C

Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C

Power dissipation per IGBT TC = 25 °C

Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min.

BSM100GD120DN2 Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2kV
• Collector Emitter Voltage Vces: 3 V
• Current Ic Continuous a Max: 100 A
• Current Temperature: 80°C
• DC Collector Current: 150 A
• Full Power Rating Temperature: 25°C
• Module Configuration: Six
• Mounting Type: Solder
• Number of Pins: 39
• Number of Transistors: 6
• Operating Temperature Range: -40°C to +125°C
• Package / Case: Econopack 3
• Power Dissipation Max: 680 W
• Power Dissipation Pd: 680 W
• Power Dissipation: 680 W
• Pulsed Current Icm: 200 A
• Transistor Case Style: Econopack 3
• Transistor Type:
• Voltage Vce Sat Typ: 2.5 V
• Voltage Vces: 1.2kV