Infineon BSM10GP120 IGBT Module

BSM10GP120

Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: YES

Brand: Infineon Technologies

Product: IGBT Silicon Modules

Configuration: Hex

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 2.4 V

Continuous Collector Current at 25 C: 20 A

Gate-Emitter Leakage Current: 300 nA

Pd - Power Dissipation: 100 W

Package / Case: EconoPIM2

Maximum Operating Temperature: + 125 C

Packaging: Tray

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Factory Pack Quantity: 10

IGBT: 10A1200V; IGBT Modules 1200V 10A PIM