#EUPEC, #BSM150GB170DN2, #IGBT_Module, #IGBT, BSM150GB170DN2 Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel, MODULE-7; BSM150GB170DN2
Manufacturer Part Number: BSM150GB170DN2Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: HALF-BRIDGE 2, 7 PINPin Count: 7ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.09Case Connection: ISOLATEDCollector Current-Max (IC): 220 ACollector-Emitter Voltage-Max: 1700 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1250 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel, MODULE-7