Infineon BSM150GT120DN2(6) IGBT Module

The Infineon BSM150GT120DN2(6) is a high-power semiconductor module designed for applications that require handling high power and high voltage. This module features a half-bridge configuration that incorporates two IGBT (Insulated Gate Bipolar Transistor) devices, allowing it to switch high currents at high frequencies. Its voltage rating is 1200V, and it has a current rating of 150A, making it suitable for various industrial applications such as industrial drives, renewable energy systems, and traction applications.

The module comes in the SEMITOP 6 package type, which offers advantages like easy assembly and low inductance, making it ideal for high-frequency switching applications. This package type also has high thermal conductivity, enabling efficient heat dissipation. This is crucial in high-power applications to manage the heat generated during operation.

The Infineon BSM150GT120DN2(6) module incorporates features that enhance its performance and reliability. It includes fast free-wheel diodes, which optimize the switching characteristics of the module. The package comes with an insulated metal base plate, contributing to the module's durability and safety.

Here are the specifications of the BSM150GT120DN2(6) module:

• Module Configuration: Half-Bridge
• Number of IGBT Devices: 2
• Voltage Rating: 1200V
• Current Rating: 150A

Key Features:

• Suitable for industrial drives, renewable energy systems, and traction applications
• Solderable power module with a 3-phase full-bridge configuration
• Includes fast free-wheel diodes for improved switching performance
• Package with insulated metal base plate for durability and safety
• SEMITOP 6 package type for easy assembly and low inductance
• High thermal conductivity for efficient heat dissipation

Maximum Ratings:

• Collector-Emitter Voltage (VCE): 1200V
• Collector-Gate Voltage (RGE = 20 KΩ)
• Gate-Emitter Voltage (VGES): ±20V
• Continuous Collector Current (IC) at Tc=80°C: 150A
• Pulsed Collector Current (Icp) for 1ms at Tc=80°C: 300A
• Pulsed Dissipation per IGBT at Tc=25°C (Ptot): 1250W
• Isolation Voltage (VIsol) (AC 1 minute): 2500V
• Operating Junction Temperature (Tj): +150°C
• Storage Temperature (Tstg): -40 to +125°C
• Mounting Screw Torque: 3.5 *3 N·m
• Creepage Distance: 11mm