#EUPEC, #BSM150GXL120DN2, #IGBT_Module, #IGBT, BSM150GXL120DN2 Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-39; BSM150GXL120DN2
Manufacturer Part Number: BSM150GXL120DN2Part Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPin Count: 39Manufacturer: Infineon Technologies AGRisk Rank: 5.73Collector Current-Max (IC): 150 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Voltage-Max: 20 VNumber of Elements: 1Operating Temperature-Max: 125 °CPower Dissipation-Max (Abs): 1050 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 3.7 V Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-39