EUPEC BSM300GA120DN2S IGBT Module

BSM300GA120DN2S Manufacturer: Infineon Product Category: IGBT Modules RoHS: No Brand: Infineon Technologies Product: IGBT Silicon Modules Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.5 V Continuous Collector Current at 25 C: 430 A Gate-Emitter Leakage Current: 320 nA Pd - Power Dissipation: 2500 W Package / Case: 62 mm Maximum Operating Temperature: + 150 C Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw Factory Pack Quantity: 1   300A/1200V/IGBT/1U;IGBT Modules 1200V 300A SINGLE