EUPEC BSM300GA120DN2S IGBT Module

BSM300GA120DN2S

Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: No

Brand: Infineon Technologies

Product: IGBT Silicon Modules

Configuration: Single

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 430 A

Gate-Emitter Leakage Current: 320 nA

Pd - Power Dissipation: 2500 W

Package / Case: 62 mm

Maximum Operating Temperature: + 150 C

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Factory Pack Quantity: 1

300A/1200V/IGBT/1U;IGBT Modules 1200V 300A SINGLE