Infineon BSM35GB120DLC IGBT Module

Manufacturer Part Number: BSM35GB120DLC

Case Connection: ISOLATED

Collector Current-Max (IC): 75 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X7

Number of Elements: 2

Number of Terminals: 7

Operating Temperature-Max: 125 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 310 W

Qualification Status: Not Qualified

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Transistor Element Material: SILICON

Turn-off Time-Nom (toff): 370 ns

Turn-on Time-Nom (ton): 110 ns

VCEsat-Max: 2.6 V

Insulated Gate Bipolar Transistor 75A I(C) 1200V V(BR)CES N-Channel