Infineon BSM35GD120DN2 IGBT Module

BSM35GD120DN2

Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: No

Brand: Infineon Technologies

Product: IGBT Silicon Modules

Configuration: Single

Collector- Emitter Voltage VCEO Max: 1200 V

Continuous Collector Current at 25 C: 550 A

Pd - Power Dissipation: 2700 W

Package / Case: 62 mm

Maximum Operating Temperature: + 150 C

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Factory Pack Quantity: 10

6IGBT: 35A1200V; IGBT Modules 1200V 400A SINGLE