Infineon BSM35GD120DN2E3224 IGBT Module

BSM35GD120DN2E3224

Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: No

Product: IGBT Silicon Modules

Configuration: Hex

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 2.7 V

Continuous Collector Current at 25 C: 50 A

Gate-Emitter Leakage Current: 150 nA

Maximum Operating Temperature: + 150 C

Package / Case: EconoPACK 2

Packaging: Bulk

Brand: Infineon Technologies

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Pd - Power Dissipation: 280 W

Factory Pack Quantity: 10

IGBT Modules N-CH 1.2KV 50A