Infineon BSM400GB60DN2 IGBT Module

Product Category:     IGBT Modules      BSM400GB60DN2

Manufacturer:     Infineon

RoHS:     No

Product:     IGBT Silicon Modules

Configuration:     Single

Collector- Emitter Voltage VCEO Max:     1200 V

Continuous Collector Current at 25 C:     550 A

Pd - Power Dissipation:     2.7 kW

Package / Case:     62 mm

Maximum Operating Temperature:     + 150 C

Brand:     Infineon Technologies

Height:     36.5 mm

Length:     106.4 mm

Maximum Gate Emitter Voltage:     +/- 20 V

Minimum Operating Temperature:     - 40 C

Mounting Style:     Screw

Factory Pack Quantity:     10

Width:     61.4 mm

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal bae plate