Infineon BSM50GD120DLC IGBT Module

Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: YES

Brand: Infineon Technologies

Product: IGBT Silicon Modules

Configuration: Hex

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 2.4 V

Continuous Collector Current at 25 C: 85 A

Gate-Emitter Leakage Current: 400 nA

Pd - Power Dissipation: 350 W

Package / Case: EconoPACK 2A

Maximum Operating Temperature: + 125 C

Packaging: Bulk

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Factory Pack Quantity: 10

50A/1200V/IGBT/6U;IGBT Modules 1200V 50A 3-PHASE