Infineon BSM50GD120DN2 IGBT Module

IGBT Technology NPT (Non-Punch Through) IGBT

Voltage Rating 1200V

Current Rating 50A

Power Dissipation 350W

Collector-Emitter Voltage (VCE) 1200V

Switching Frequency 0-20 kHz

Collector-Emitter Saturation Voltage (VCE(sat)) 2.0V (typical)

Gate Threshold Voltage (VGE(th)) 6V (typical)

Operating Temperature Range -40°C to +150°C

Storage Temperature Range -55°C to +150°C

Thermal Resistance Junction to Case (RthJC) 0.2 K/W

Mounting Style Screw Mount

Weight Approx. 450g