Infineon BSM50GD120DN2E3226 IGBT Module

Manufacturer: Infineon

Product Category: IGBT Modules

Product: IGBT Silicon Modules

Configuration:Hex

Collector- Emitter Voltage VCEO Max:1200 V

Collector-Emitter Saturation Voltage:2.5 V

Continuous Collector Current at 25 C:50 A

Gate-Emitter Leakage Current:200 nA

Pd - Power Dissipation:350 W

Package / Case:EconoPACK 2

Maximum Operating Temperature:+ 150 C

Packaging:Tray

Height:17 mm

Length:107.5 mm

Technology:Si

Width:45.5 mm

Mounting Style:Chassis Mount

Maximum Gate Emitter Voltage:20 V

IGBT Modules N-CH 1.2KV 50A