Infineon BSM50GP60 IGBT Module

Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: YES

Brand: Infineon Technologies

Product: IGBT Silicon Modules

Configuration: Hex

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.2 V

Continuous Collector Current at 25 C: 70 A

Gate-Emitter Leakage Current: 300 nA

Pd - Power Dissipation: 250 W

Package / Case: EconoPIM2

Maximum Operating Temperature: + 125 C

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw