#EUPEC, #BSM50GP60G, #IGBT_Module, #IGBT, BSM50GP60G Insulated Gate Bipolar Transistor, 70A 600V, N-Channel, MODULE-24
Maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :50A
Collector current Icp 1ms Tc=25°C :100A
Collector power dissipation Pc:250W
Isolation Voltage VIsol (AC 1 minute) :3000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.0 N·m
Weight 180g