Infineon BSM50GX120DN2 IGBT Module

IGBT Power Module Infineon #BSM50GX120DN2

• Half-bridge

• Including fast free-wheeling diodes

• Package with insulated metal base plate

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:78A

Collector current Icp:158A

Collector power dissipation Pc:350W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m