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Infineon BSM75GAL120DN2 IGBT Module

#Infineon, #BSM75GAL120DN2, #IGBT_Module, #IGBT, BSM75GAL120DN2 Insulated Gate Bipolar Transistor 105A I(C) 1200V V(BR)CES N-Channel HALF BRIDGE GAL 1 7 PIN

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 25
· Date Code: 2019+
. Available Qty: 416
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BSM75GAL120DN2 Specification

Sell BSM75GAL120DN2, #Infineon #BSM75GAL120DN2 Stock, BSM75GAL120DN2 Insulated Gate Bipolar Transistor 105A I(C) 1200V V(BR)CES N-Channel HALF BRIDGE GAL 1 7 PIN, #IGBT_Module, #IGBT, #BSM75GAL120DN2
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URL: https://www.slw-ele.com/bsm75gal120dn2.html

Manufacturer Part Number: BSM75GAL120DN2

Pbfree Code: Yes

Part Life Cycle Code: Not Recommended

Ihs Manufacturer: Infineon TECHNOLOGIES AG

Part Package Code: MODULE

Package Description: HALF BRIDGE GAL 1, 7 PIN

Pin Count: 7

ECCN Code: EAR99

Manufacturer: Infineon Technologies AG

Case Connection: ISOLATED

Collector Current-Max (IC): 105 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: SINGLE WITH BUILT-IN DIODE

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X7

Number of Elements: 1

Number of Terminals: 7

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Peak Reflow Temperature (Cel): NOT SPECIFIED

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 625 W

Qualification Status: Not Qualified

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Position: UPPER

Insulated Gate Bipolar Transistor 105A I(C) 1200V V(BR)CES N-Channel HALF BRIDGE GAL 1 7 PIN

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