Infineon BSM75GB120DN2 IGBT Module

BSM75GB120DN2

Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: No

Brand: Infineon Technologies

Product: IGBT Silicon Modules

Configuration: Half Bridge

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 105 A

Gate-Emitter Leakage Current: 320 nA

Maximum Operating Temperature: + 150 C

Package / Case: Half Bridge1

Maximum Gate Emitter Voltage: 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Pd - Power Dissipation: 625 W

Factory Pack Quantity: 10

2IGBT: 75A1200V; IGBT Modules 1200V 75A DUAL