Infineon BSM75GD120DN2 IGBT Module

#BSM75GD120DN2 Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: YES

Brand: Infineon Technologies

Product: IGBT Silicon Modules

Configuration: Hex

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 103 A

Gate-Emitter Leakage Current: 320 nA

Maximum Operating Temperature: + 150 C

Package / Case: EconoPACK 3A

Maximum Gate Emitter Voltage: 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Pd - Power Dissipation: 520 W