#Powerex Inc, #C355B, #IGBT_Module, #IGBT, C355B Silicon Controlled Rectifier, 274.75A I(T)RMS, 250000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, T62, 3 PIN; C35
Manufacturer Part Number: C355BPart Life Cycle Code: ActiveIhs Manufacturer: Powerex INCPackage Description: DISK BUTTON, O-CEDB-N2Pin Count: 3ECCN Code: EAR99HTS Code: 8541.30.00.80Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.7Additional Feature: FASTCircuit Commutated Turn-off Time-Nom: 20 µsConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 100 V/usDC Gate Trigger Current-Max: 150 mADC Gate Trigger Voltage-Max: 3 VHolding Current-Max: 200 mAJESD-30 Code: O-CEDB-N2Leakage Current-Max: 17 mANon-Repetitive Pk On-state Cur: 1800 ANumber of Elements: 1Number of Terminals: 2On-state Current-Max: 250000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -45 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONQualification Status: Not QualifiedRMS On-state Current-Max: 274.75 ARepetitive Peak Off-state Voltage: 200 VRepetitive Peak Reverse Voltage: 200 VSubcategory: Silicon Controlled RectifiersSurface Mount: YESTerminal Form: NO LEADTerminal Position: ENDTrigger Device Type: SCR Silicon Controlled Rectifier, 274.75A I(T)RMS, 250000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, T62, 3 PIN