#Mitsubishi, #CM1000DXL_24S, #IGBT_Module, #IGBT, Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES
Mitsubishi igbt #CM1000DXL-24S
High power switching use insulated type
Collector current IC..............................................900A
Collector-emittr voltage VCES.............................1200V
Maximum junction tempeerature Tjmax.............175°C
. Flat base Type
. Copper base plate (non-plating)
. Tin plating pin terminals
. RoHS Directive compliant
. DC current rating is limited by power terminals.
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage G-E short-circuited Vces:1200V
Gate-Emitter voltage G-E short-circuited VGES:±20V
Collector current DC,Tc=124°C(Note. 2,4 ) Ic : 25A
Collector current Pulse,Repetitive(Note.3) ICRM : 2000A
Total power dissipation TC=25 °C(Note. 2,4 ) Ptot :7500W
Isolation between terminal and copper base*2 Viso AC :1 minVisol :2500V
Maximum junction temperature Tjmax 175°C
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5*1 N·m
Weight Typical value 690g