Mitsubishi CM100DU-12F-300G IGBT Module

Mitsubishi CM100DU-12F-300G is a power module designed for use in high-power industrial applications. It consists two insulated gate bipolar transistor (IGBT) modules in a half-bridge configuration, each rated for 600V & 100A. The module includes integrated gate driver circuit and over-current and over-temperature protection.

CM100DU-12F-300G designed for high reliability & performance, for use in motor drives, inverters, & power supplies. Its compact size and high power density make it ideal for use in applications where space is limited.

CM100DU-12F-300G module is designed to be easy to use and integrate into existing systems, and its high switching frequency capability allows for efficient operation and reduced power losses.

CM100DU-12F-300G Features:

.Low Drive Power

.Low VCE(sat)

.Discrete Super-Fast Recovery Free-Wheel Diode

.Isolated Baseplate for Easy Heat Sinking

Applications:

.AC Motor Control

.UPS□ Battery Powered Supplies

DualIGBTMOD™ Power Module.

DC Collector Current 100A

Collector Emitter Voltage Vces 600V

Power Dissipation Pd 350W

Collector Emitter Voltage V(br)ceo 600V

Transistor Case Style Module

No. of Pins 7

Operating Temperature Max 150°C

Operating Temperature Min -40 °C

SVHC To Be Advised

Module Transistor N Channel 100 A 600 V 350 W 600 V Module