Mitsubishi CM100DY-24H IGBT Module

Mitsubishi IGBT CM100DY-24H: High-Performance Half Bridge Module

The Mitsubishi CM100DY-24H is a powerful IGBT (Insulated Gate Bipolar Transistor) module designed for discrete semiconductor applications. As part of the IGBTMOD™ series, this module offers exceptional performance and reliability for a wide range of electronic devices and systems.

Key Specifications:

• Category: Discrete Semiconductor Products
• Family: IGBTs - Modules
• Manufacturer: Mitsubishi Inc.
• IGBT Type: Half Bridge Configuration
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 100A
• Power - Max: 780W
• Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 100A
• Current - Collector Cutoff (Max): 1mA
• Input Capacitance (Cies) @ Vce: 20nF @ 10V
• Input Standard
• NTC Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

The Mitsubishi CM100DY-24H is designed to deliver high performance and efficiency in various electronic applications. With a maximum collector-emitter breakdown voltage of 1200V and a maximum collector current of 100A, it can handle high-power loads with ease.

The module's half bridge configuration allows for versatile circuit designs and applications, making it suitable for a wide range of power electronic systems. With a maximum power rating of 780W, it provides ample power handling capability.

The CM100DY-24H features a low Vce(on) (maximum voltage drop across the collector-emitter) of 3.4V at 15V gate-emitter voltage and 100A collector current. This low on-state voltage helps minimize power losses and improve overall system efficiency.