Shunlongwei Co. ltd.
IGBT Module / LCD Display Distributor
Customer Service
+86-755-8273 2562
IGBT Module / LCD Display Distributor
#MITSUBISHI, #CM100E3U_24H, #IGBT_Module, #IGBT, CM100E3U-24H Mitsubishi high power seitching Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
CM100E3U-24H Product details
HIGH POWER SWITCHING USE INSULATED TYPE
Mitsubishi IGBT Modules are de-signed for use in switching applica-tions. Each module consists of oneIGBT having a reverse-connectedsuper-fast recovery free-wheel di-ode and an anode-collector con-nected super-fast recovery free-wheel diode. All components andinterconnects are isolated from theheat sinking baseplate, offeringsimplified system assembly andthermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy Heat Sinking
Application:
Brake
Ordering Information:Example: Select the complete module number you desire from thetable - i.e. 1200V (VCES), 100 Ampere IGBT Module.
aximum ratings (Tc=25°C unless without specified)
Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 100 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 200* Amperes
Maximum Collector Dissipation (Tc = 25°C) Pc 650 Watts
Mounting Torque 2.5~3.5 N.m
Weight 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts
