#Mitsubishi, #CM1200DC_34N, #IGBT_Module, #IGBT, CM1200DC-34N Mitsubishi hvigbt modules high power wsitching use insulated type 1200A 1700V
IC ................................................................1200A
VCES .......................................................1700V
Insulated Type
2-element in a Pack
AISiC Baseplate
Trench Gate IGBT : CSTBT™
Soft Reverse Recovery Diode
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1700V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :1200A
Collector current Icp 1ms Tc=25°C :2400A
Collector power dissipation Pc:6500W
Isolation Voltage VIsol (AC 1 minute) :4000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.0~6.0 N·m