MITSUBISHI CM1200HC-50H IGBT Module

CM1200HC-50H Product details

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

● IC................................................................ 1200A

● VCES ....................................................... 2500V

● Insulated Type

● 1-element in a Pack

● AISiC Baseplate

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:2500V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :1200A

Collector current Icp 1ms Tc=25°C :2400A

Collector power dissipation Pc:14700W

Isolation Voltage VIsol (AC 1 minute) :6000V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C