Mitsubishi CM1200HC-66H IGBT Module

CM1200HC-66H IGBT Features

● IC................................................................ 1200A

● VCES ....................................................... 3300V

● Insulated Type

● 1-element in a Pack

● AISiC Baseplate

VCES Collector-emitter voltage VGE = 0V, Tj = 25°C 3300V

VGES Gate-emitter voltage VCE = 0V, Tj = 25°C ±20 V

IC Collector current TC = 100°C 1200A

ICM Collector current Pulse 2400A

PC (Note 3) Maximum power dissipation TC = 25°C, IGBT part 14700W

Tj Junction temperature –40 ~ +150 °C

Top Operating temperature –40 ~ +125 °C

Tstg Storage temperature –40 ~ +125 °C

Viso Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1min. 6000V

tpsc Maximum short circuit pulse width VCC = 2200V, VCES ≤ 3300V, VGE = 15V Tj = 125°C 10µs

ELECTRICAL CHARACTERISTICS

ICES Collector cut-off current VCE = VCES, VGE = 0V, Tj = 25°C 15 mA

VGE(th) Gate-emitter threshold voltage IC = 120mA, VCE = 10V, Tj = 25°C 5.0~7.0V

IGES Gate leakage curren VGE = VGES, VCE = 0V, Tj = 25°C 0.5 mA

Cies Input capacitance VCE = 10V, f = 100kHz 180 nF

Qg Total gate charge VCC = 1650V, IC = 1200A, VGE = 15V, Tj = 25°C 8.6 µC

Mounting torque M6 : Mounting screw 3.0~6.0 mm

Mass 1.5kg