#MITSUBISHI, #CM150DUS_12F, #IGBT_Module, #IGBT, CM150DUS-12F Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-7; CM150DUS-
Manufacturer Part Number: CM150DUS-12FPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-XUFM-X6Pin Count: 7Manufacturer: Mitsubishi ElectricRisk Rank: 5.71Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 150 ACollector-Emitter Voltage-Max: 600 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X6Number of Elements: 2Number of Terminals: 6Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 655 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-7