#Mitsubishi, #CM150DY_12H, #IGBT_Module, #IGBT, CM150DY-12H Mitsubishi High power switchinguse insulated 600V 150A H SER ;
CM150DY-12H Product details
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
□ Low Drive Power
□ Low VCE(sat)
□ Discrete Super-Fast Recovery Free-Wheel Diode
□ High Frequency Operation
□ Isolated Baseplate for Easy Heat Sinking
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
Absolute maximum ratings (Tc=25°C unless without specified)
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) V CES 600 Vo1ts
Gate-Emitter Voltage (C-E SHORT) V GES ±20 Vo1ts
Collector Current (TC=25C) IC 150 Amperes
Peak Collector Current ICM 300* Amperes
Emitter Current**(TC=25℃) IE 150 Amperes
Peak Emitter Current** IEM 300* Amperes
Maximum Collector Dissipation (TC=25°℃,Tj≤150°C) Pc 600 Watts
Mounting Torque, M5 Main Terminal - 1.47 ~1.96 N-m
Mounting Torque, M6 Mounting 1.96~2.94 N.m
Weight 270 Grams
Isolation Voltage (Main Terminal to Baseplate,AC 1 min.) Viso 2500 Vrms