#Mitsubishi, #CM150DY_24A, #IGBT_Module, #IGBT, CM150DY-24A 150A/1200V/IGBT/2U; IGBT Array & Module Transistor N Channel 150 A 1.2 kV 960 W 1.2 kV Module
The CM150DY-24A is a 1200V Dual IGBTMOD™ A-series Module designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Low VCE (sat)
Discrete super-fast recovery free-wheel diode Isolated baseplate for easy heat sinking ±20V
Gate-emitter voltage (C-E short) 300A
Peak collector current 150A
Emitter current DC Collector Current 150A
Applications
Motor Drive & Control; Power Management Product Specifications, Documents & More
Transistor Polarity N Channel
Collector Emitter Voltage Vces 1.2kV
Power Dissipation Pd 960W
Collector Emitter Voltage V(br)ceo 1.2kV
Transistor Case Style Module
No. of Pins 7
Operating Temperature Max 150°C
Operating Temperature Min -40 °C
SVHC To Be Advised
150A/1200V/IGBT/2U;IGBT Array & Module Transistor N Channel 150 A 1.2 kV 960 W 1.2 kV Module