Mitsubishi CM150E3U-12H IGBT Module

Mitsubishi CM150E3U-12H is a power module or an insulated-gate bipolar transistor (IGBT) module used in power electronics applications.

CM150E3U-12H is a high power module with rated voltage 1200V & maximum current 150A. CM150E3U-12H is commonly used in motor drives, welding equipment, and power converters.

The CM150E3U-12H module has a compact design and low thermal resistance, allowing it to operate efficiently in high-temperature environments. CM150E3U-12H equipped with built-in temperature sensor that provides protection against in over-temperature operation conditions.

CM150E3U-12H Specification:

Manufacturer Part Number: CM150E3U-12H

Manufacturer: Mitsubishi ELECTRIC CORP

Package Description: FLANGE MOUNT, R-XUFM-X5

Additional Feature: SUPER FAST RECOVERY

Case Connection: ISOLATED

Collector Current-Max (IC): 150 A

Collector-Emitter Voltage-Max: 600 V

Configuration: SINGLE WITH BUILT-IN DIODE

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X5

Number of Elements: 1

Number of Terminals: 5

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Peak Reflow Temperature (Cel): NOT SPECIFIED

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 600 W

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Insulated Gate Bipolar Transistor 150A I(C) 600V V(BR)CES N-Channel